Variable-barrier tunneling SOI transistor (VBT)

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2009, Pages

  Afzalian, A ^a   Dehdashti, N ^a   Ferain, I ^a   Lee, C W ^a   Yan, R ^a   Razavi, P ^a   Colinge, J P ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CURRENT RANGE; GATE VOLTAGES; SOI TRANSISTORS; SUB-THRESHOLD CURRENT; SUBTHRESHOLD SLOPE;

ELECTRON MOBILITY; TUNNELING (EXCAVATION); WIND TUNNELS;

IMPACT IONIZATION;

EID: 72449205225     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2009.5318739     Document Type: Conference Paper

References (6)

1. rd edition, Kluwer Academic Publishers/Springer
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3. Zhang Q, et al., "Low-subthreshold-swing tunnel transistors", IEEE Electron Dev Lett 2006;27:297-300.
4. W.Y. Choi, et al., "Tunneling field-effect transistors with subthreshold swing (SS) less than 60 mV/dec", IEEE EDL 28-8, 743-745, 2007
5. DD Scaling Path for Future Low Power ICs", International Symposium on VLSI TSA, 14-15, 2008
6. A. Afzalian et al. "A new F(ast)-CMS Algorithm for Efficient Three-Dimensional NEGF Simulations of Arbitrary Shaped Silicon Nanowire MUGFETs", SISPAD, Sept 2009, San Diego, CA.