Conductivity and charge trapping after electrical stress in amorphous and polycrystalline Al2O3Based Devices Studied With AFM-Related Techniques

IEEE Transactions on Nanotechnology

Volumn 10, Issue 2, 2011, Pages 344-351

  Lanza, Mario ^a   Porti, Marc ^a   Nafra, Montserrat ^a   Aymerich, Xavier ^a   Benstetter, Gnther ^b   Lodermeier, Edgar ^b   Ranzinger, Heiko ^b   Jaschke, Gert ^c   Teichert, Steffen ^d   Wilde, Lutz ^d   Michalowski, Pawel Piotr ^d  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^c QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

^d Fraunhofer Center Nanoelectronic Technologies   (Germany)

Author keywords

Al2O3; atomic force microscopy (AFM); dielectric breakdown; electrical characterization; high k

Indexed keywords

AFM; AL2O3; ANNEALING TEMPERATURES; DIELECTRIC BREAKDOWNS; DIFFUSED SILICON; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; ELECTRICAL STRESS; GATE OXIDE; HIGH-K; NANO SCALE; POLYCRYSTALLINE; SI DIFFUSION;

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; CHARGE TRAPPING; CRYSTALLIZATION; ELECTRIC BREAKDOWN; FLASH MEMORY; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 79952676076     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2041935     Document Type: Article

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