Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Porti, M ^a   Avidano, M ^a   Nafria M ^a   Aymerich, X ^a   Carreras, J ^b   Garrido, B ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONDUCTION; GATE OXIDES; NANOCRYSTALS; TUNNELING;

ATOMIC FORCE MICROSCOPY; DATA STORAGE EQUIPMENT; ELECTRIC CONDUCTANCE; EMBEDDED SYSTEMS; GATES (TRANSISTOR); MOS DEVICES; SEMICONDUCTING SILICON;

NANOSTRUCTURED MATERIALS;

EID: 25144465920     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2010626     Document Type: Article

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