Correlation of microscopic and macroscopic electrical characteristics of high-k Zr Six O2-x thin films using tunneling atomic force microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 364-368

  Weinreich, W ^a   Wilde, L ^a   Kucher P ^a   Lemberger, M ^b   Yanev, V ^b   Rommel, M ^b   Bauer, A J ^b   Erben, E ^c   Heitmann, J ^c   Schroder U ^c   Oberbeck, L ^c  

^a Fraunhofer Center Nanoelectronic Technologies   (Germany)

^b FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^c QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC PHYSICS; CHARGE TRAPPING; DOPING (ADDITIVES); REAL TIME SYSTEMS; THIN FILMS; ZIRCONIUM;

ATOMIC FORCES; CURRENT CHARACTERISTICS; DOPANT CONCENTRATIONS; DOPING LEVELS; ELECTRICAL CHARACTERISTICS; FILM HOMOGENEITIES; I - V CURVES; NANO-METER SCALE; NON UNIFORMITIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59949104632     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3058725     Document Type: Article

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