Thickness determination of thin and ultra-thin SiO 2 films by C-AFM IV-spectroscopy

Applied Surface Science

Volumn 252, Issue 6, 2006, Pages 2375-2388

  Frammelsberger, Werner ^a,b   Benstetter, Guenther ^a   Kiely, Janice ^b   Stamp, Richard ^b  

^a DEGGENDORF INSTITUTE OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF THE WEST OF ENGLAND   (United Kingdom)

Author keywords

AFM; C AFM; MOS; Silicon dioxide; Tunnelling

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELLIPSOMETRY; MOS DEVICES; OXIDES; SILICA;

C-AFM; ELECTRICAL THICKNESS; TUNNELLING;

THIN FILMS;

EID: 30344486689     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.04.010     Document Type: Article

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