A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

Microelectronics Reliability

Volumn 48, Issue 11-12, 2008, Pages 1759-1764

  Pagano, R ^a   Lombardo, S ^a   Palumbo, F ^b   Kirsch, P ^c,d   Krishnan, S A ^c,d   Young, C ^c   Choi, R ^c   Bersuker, G ^c   Stathis, J H ^d  

^a CNR   (Italy)

^b DEPARTAMENTO DE FÍSICA   (Argentina)

^c SEMATECH   (United States)

^d IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; METAL RECOVERY; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

DIELECTRIC BREAKDOWNS; GATE STACKS; GATE VOLTAGES; INTERFACIAL LAYERS; LOW CURRENTS; MEASUREMENT METHODOLOGIES; PROGRESSIVE BREAKDOWNS; TIN METAL GATES;

LEAKAGE CURRENTS;

EID: 55649085738     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.07.071     Document Type: Article

References (19)

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