Effect of gate dopant diffusion on leakage current in n+poly-Si/HfO2 and examination of leakage paths by conducting atomic force microscopy

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 373-375

  Yu, Xiongfei ^a   Huang, Jidong ^a   Yu, Mingbin ^a   Zhu, Chunxiang ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Conducting atomic force microscopy (C AFM); Gate doping concentration; High gate dielectric; Leakage current; Leakage path; Poly Si gate

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITORS; GRAIN BOUNDARIES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTOR DOPING;

GATE DOPING CONCENTRATION;

GATE DIELECTRICS;

EID: 34247618868     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895404     Document Type: Article

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