C-AFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 191-196

  Blasco, X ^a   Petry J ^b   Nafria M ^a   Aymerich, X ^a   Richard, O ^b   Vandervorst, W ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

Author keywords

Conductive atomic force microscopy; Electrical characterization; HfAlOx; High resolution transmission electron microscopy; High k dielectrics; Mixed oxides; Post deposition annealing temperature

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); IMAGE ANALYSIS; PERMITTIVITY; SILICA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL CHARACTERIZATION; POST-DEPOSITION ANNEALING TEMPERATURES;

HAFNIUM COMPOUNDS;

EID: 1642587647     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.035     Document Type: Conference Paper

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