Misfit stress relaxation mechanism in GeO2/Ge systems: A classical molecular simulation study

ECS Transactions

Volumn 33, Issue 6, 2010, Pages 901-912

  Watanabe, T ^a   Onda, T ^a   Ohdomari, I ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; GERMANIUM OXIDES; MOLECULAR STRUCTURE; SILICA; SILICON; STRESS RELAXATION;

BOND ANGLE; EMPIRICAL FORCE FIELDS; EQUILIBRIUM ANGLE; GE SUBSTRATES; MISFIT STRESS RELAXATIONS; MOLECULAR SIMULATIONS; RELAXATION MECHANISM;

SI-GE ALLOYS;

EID: 79952673013     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3487621     Document Type: Conference Paper

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