Atomistic modeling of strain and diffusion at the Si/ SiO2 interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 4, 2010, Pages

  Ganster, Patrick ^a   Tréglia, Guy ^a   Saúl, Andrés ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954827298     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.045315     Document Type: Article

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