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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 2, 2004, Pages 492-497

Large-Scale Atomistic Modeling of Thermally Grown SiO2 on Si(111) Substrate

(6) Tatsumura, Kosuke a Watanabe, Takanobu a,b Yamasaki, Daisuke a Shimura, Takayoshi c Umeno, Masataka d Ohdomari, Iwao a

a WASEDA UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c OSAKA UNIVERSITY (Japan)

d FUKUI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

Orientation; Oxidation; Residual order; Si(001); Si(111); Silicon; Simulation; X ray CTR scattering

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; GROWTH (MATERIALS); MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MOLECULAR ORIENTATION; OXIDATION; STRESS ANALYSIS; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

RESIDUAL ORDERS; SI(001); THERMAL GROWN OXIDES; X-RAY CRYSTAL TRUNCATION ROD (CTR) SCATTERING;

SILICA;

EID: 1842433360 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.492 Document Type: Article

Times cited : (18)

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