Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7250-7255

  Tatsumura, Kosuke ^a   Watanabe, Takanobu ^a   Yamasaki, Daisuke ^a   Shimura, Takayoshi ^b   Umeno, Masataka ^c   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c FUKUI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Growth temperature; Oxidation; Residual order; Silicon; Simulation; Thermal annealing; X ray CTR scattering

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTALLIZATION; GATES (TRANSISTOR); MICROELECTRONICS; MOLECULAR DYNAMICS; OXIDATION; PASSIVATION; X RAY SCATTERING;

GROWTH TEMPERATURES; RESIDUAL ORDER; THERMAL ANNEALING;

SILICA;

EID: 1242300202     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7250     Document Type: Article

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