First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces

Applied Physics Letters

Volumn 95, Issue 1, 2009, Pages

  Saito, Shoichiro ^a   Hosoi, Takuji ^a   Watanabe, Heiji ^a   Ono, Tomoya ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM EMISSION; BONDING NETWORKS; ELECTRICAL PROPERTY; FIRST-PRINCIPLES; FIRST-PRINCIPLES STUDY; HIGH FLEXIBILITY; INTERFACE DEFECTS; LOW DEFECT DENSITIES; OXIDATION PROCESS; TOTAL ENERGY CALCULATION;

ATOMS; ELECTRIC PROPERTIES; GERMANIUM; LATTICE MISMATCH; SOLID STATE PHYSICS;

DEFECT DENSITY;

EID: 67650507840     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3168501     Document Type: Article

References (24)

1. H. Fukuda, T. Ueno, H. Kawarada, and I. Ohdomari, Jpn. J. Appl. Phys., Part 2 0021-4922 32, L569 (1993). 10.1143/JJAP.32.L569
2. K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, and A. Toriumi, Jpn. J. Appl. Phys. 47, 2349 (2008). 10.1143/JJAP.47.2349
3. C. H. Lee, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi, Extended Abstracts of Solid State Devices and Materials (The Japan Society of Applied Physics, Tsukuba, 2008), p. 16.
4. D. Kuzum, A. J. Pethe, T. Krishnamohan, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 723.
5. H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, Appl. Phys. Lett. 0003-6951 93, 032104 (2008). 10.1063/1.2959731
6. T. Hosoi, K. Kutsuki, G. Okamoto, M. Saito, T. Shimura, and H. Watanabe, Appl. Phys. Lett. 0003-6951 94, 202112 (2009). 10.1063/1.3143627
7. G. Pourtois, M. Houssa, A. Delabie, T. Conard, M. Caymax, M. Meuris, and M. M. Heyns, Appl. Phys. Lett. 0003-6951 92, 032105 (2008) 10.1063/1.2833696; M. Houssa, G. Pourtois, M. Caymax, M. Meuris, and M. M. Heyns, Appl. Phys. Lett. 0003-6951 92, 242101 (2008). 10.1063/1.2944892
8. M. Houssa, G. Pourtois, M. Caymax, M. Meuris, M. M. Heyns, V. V. Afanas'ev, and A. Stesmans, Appl. Phys. Lett. 0003-6951 93, 161909 (2008). 10.1063/1.3006320
9. H. Kageshima and K. Shiraishi, Appl. Surf. Sci. 0169-4332 130, 176 (1998) 10.1016/S0169-4332(98)00046-4; H. Kageshima and K. Shiraishi, Phys. Rev. Lett. 0031-9007 81, 5936 (1998). 10.1103/PhysRevLett.81.5936
10. T. Yamasaki, K. Kato, and T. Uda, Phys. Rev. Lett. 0031-9007 91, 146102 (2003). 10.1103/PhysRevLett.91.146102
11. Z. Ming, K. Nakajima, M. Suzuki, K. Kimura, M. Uematsu, K. Torii, S. Kamiyama, Y. Nara, and K. Yamada, Appl. Phys. Lett. 0003-6951 88, 153516 (2006). 10.1063/1.2195101
12. P. Hohenberg and W. Kohn, Phys. Rev. 0096-8250 136, B864 (1964). 10.1103/PhysRev.136.B864
13. J. R. Chelikowsky, N. Troullier, and Y. Saad, Phys. Rev. Lett. 0031-9007 72, 1240 (1994). 10.1103/PhysRevLett.72.1240
14. K. Hirose, T. Ono, Y. Fujimoto, and S. Tsukamoto, First-Principles Calculations in Real-Space Formalism, Electronic Configurations and Transport Properties of Nanostructures (Imperial College, London, 2005).
15. T. Ono and K. Hirose, Phys. Rev. Lett. 0031-9007 82, 5016 (1999) 10.1103/PhysRevLett.82.5016; T. Ono and K. Hirose, Phys. Rev. B 0163-1829 72, 085115 (2005). 10.1103/PhysRevB.72.085115
16. N. Troullier and J. L. Martins, Phys. Rev. B 0163-1829 43, 1993 (1991). 10.1103/PhysRevB.43.1993
17. We used the norm-conserving pseudopotentials NCPS97 constructed by K. Kobayashi; see K. Kobayashi, Comput. Mater. Sci. 0927-0256 14, 72 (1999). 10.1016/S0927-0256(98)00074-3
18. J. P. Perdew and A. Zunger, Phys. Rev. B 0163-1829 23, 5048 (1981). 10.1103/PhysRevB.23.5048
19. The optimized lattice constants are 10.54 a.u. for Ge and 10.19 a.u. for Si.
20. A. Fazzio, A. Janotti, A. J. R. da Silva, and R. Mota, Phys. Rev. B 0163-1829 61, R2401 (2000). 10.1103/PhysRevB.61.R2401
21. M. J. Puska, S. Pöykkö, M. Pesola, and R. M. Nieminen, Phys. Rev. B 0163-1829 58, 1318 (1998). 10.1103/PhysRevB.58.1318
22. M. D. Moreira, R. H. Miwa, and P. Venezuela, Phys. Rev. B 0163-1829 70, 115215 (2004) 10.1103/PhysRevB.70.115215; R. J. Needs, J. Phys.: Condens. Matter 0953-8984 11, 10437 (1999). 10.1088/0953-8984/11/50/332
23. D. M. Christie and J. R. Chelikowsky, Phys. Rev. B 0163-1829 62, 14703 (2000). 10.1103/PhysRevB.62.14703
24. E. M. Dianov and V. M. Mashinsky, J. Lightwave Technol. 0733-8724 23, 3500 (2005). 10.1109/JLT.2005.855867