Modeling of a SiO2/Si(001) structure including step and terrace configurations

Applied Surface Science

Volumn 162, Issue , 2000, Pages 116-121

  Watanabe, Takanobu ^a   Ohdomari, Iwao ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; DIMERS; OXIDATION; POTENTIAL ENERGY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON; SURFACE PHENOMENA;

SURFACE RECONSTRUCTION;

HETEROJUNCTIONS;

EID: 0034249108     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00179-3     Document Type: Article

References (15)

1. 2 Interface. 1988;Plenum, New York.
2. Hattori T. CRC Crit. Rev. Solid State Mater. Sci. 20:1995;339.
3. Kageshima H., Shiraishi K. Phys. Rev. Lett. 81:1998;5936.
4. Pasquarello A., Hybertsen M.S., Car R. Nature. 396:1998;58.
5. Watanabe T., Fujiwara H., Noguchi H., Hoshino T., Ohdomari I. Jpn. J. Appl. Phys. 38:1999;L366.
6. Watanabe T., Ohdomari I. Thin Solid Films. 343-344:1999;370.
7. Ishikawa K., Ogawa H., Oshida S., Suzuki K., Fujimura S. Ext. Abstr. Int. Conf. Solid State Devices Mater., Osaka. 1995;500.
8. Daum W., Krause H.-J., Reichel U., Ibach H. Phys. Rev. Lett. 71:1993;1234.
9. Ohmi T., Morita M., Teramoto A., Makihara K., Tseng K.S. Appl. Phys. Lett. 60:1992;2126.
10. Ichikawa M., Doi T. Appl. Phys. Lett. 60:1992;1082.
11. Stillinger F., Weber T. Phys. Rev. B. 31:1985;5262.
12. Watanabe H., Kato K., Uda T., Fujita K., Ichikawa M., Kawamura T., Terakura K. Phys. Rev. Lett. 80:1998;345.
13. Polack E. Computational Methods in Optimization. 1971;Academic Press.
14. Nose S. Mol. Phys. 52:1984;225.
15. C.W. Gear, Numerical Initial Value Problem in Ordinary Differential Equations, Prentice-Hall.