Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure

Chinese Physics B

Volumn 20, Issue 2, 2011, Pages

  Wang, Chong ^a   Yang, Yu ^a,b   Yang, Rui Dong ^a,c   Li, Liang ^a   Xiong, Fei ^a   Bao, Ji Ming ^b  

^a YUNNAN UNIVERSITY   (China)

^b UNIVERSITY OF HOUSTON   (United States)

^c HONGHE UNIVERSITY   (China)

Author keywords

interstitial cluster; photoluminescence; self ion implantation; silicon on insulator

Indexed keywords

ANNEALING TEMPERATURES; DEFECT-RELATED EMISSION; EMISSION PEAKS; FREE EXCITONS; HIGH CRITICAL TEMPERATURE; INTERSTITIAL CLUSTERS; OPTOELECTRONIC APPLICATIONS; PHOTOLUMINESCENCE INTENSITIES; SELF-ION-IMPLANTATION; SI FILMS; SILICON ON INSULATOR WAFERS; SILICON-ON-INSULATOR; SILICON-ON-INSULATOR STRUCTURE; THERMAL IONIZATION;

IONS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

SILICON WAFERS;

EID: 79952404376     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/2/026802     Document Type: Article

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