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Applied Surface Science

Volumn 254, Issue 15, 2008, Pages 4626-4631

Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique

(8) Wang, C a,b Yang, Y a Chen, X M c Liu, Z L b Cui, H Y b Zhang, S a Chen, X S b Lu, W b

a YUNNAN UNIVERSITY (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

c KUNMING INSTITUTE OF PHYSICS (China)

Author keywords

Molecular beam epitaxy; Photoluminescence; Piezoreflectance spectroscopy; Surface quantum dots

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL TRANSITIONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS;

INTERBAND TRANSITION; PIEZOREFLECTANCE SPECTROSCOPY; SURFACE QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 42749092434 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2008.01.089 Document Type: Article

Times cited : (3)

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