Point defect engineered Si sub-bandgap light-emitting diodes

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6800, Issue , 2008, Pages

  Bao, Jiming ^a   Charnvanichborikarn, Supakit ^b   Yang, Yu ^a,c   Tabbal, Malek ^a,d   Shin, Byungha ^a   Wong Leung, Jennifer ^b   Williams, James S ^b   Aziz, Michael J ^a   Capasso, Federico ^a  

^a HARVARD UNIVERSITY   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c YUNNAN UNIVERSITY   (China)

^d AMERICAN UNIVERSITY OF BEIRUT   (Lebanon)

Author keywords

Ion implantation; Light emitting diode; Point defects; Self interstitial; Silicon

Indexed keywords

DEVICE PERFORMANCES; PULSED LASER MELTING; SELF-INTERSTITIAL;

ENERGY GAP; ION IMPLANTATION; POINT DEFECTS; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING; SILICON; SILICON ON INSULATOR TECHNOLOGY;

LIGHT EMITTING DIODES;

EID: 41149162847     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.758543     Document Type: Conference Paper

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