Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Yang, Yu ^a   Bao, Jiming ^b   Wang, Chong ^a   Aziz, Michael J ^c  

^a YUNNAN UNIVERSITY   (China)

^b UNIVERSITY OF HOUSTON   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BAND GAPS; BEFORE AND AFTER; DOSE RANGE; ETCH DEPTH; INFRARED LIGHT SOURCES; LUMINESCENCE CENTERS; OPTIMAL ANNEALING; P-TYPE SILICON WAFERS; PHOTOLUMINESCENCE SPECTRUM; PROJECTED RANGE; SELF-ION IMPLANTATION; SILICON-BASED; SPATIAL DISTRIBUTION; THERMAL-ANNEALING; TOP SURFACE;

ANNEALING; ENERGY GAP; ION IMPLANTATION; LIGHT SOURCES; LUMINESCENCE; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77954195955     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3436572     Document Type: Article

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