Temporal decay measurement of condensate luminescence and its application to characterization of silicon-on-insulator wafers

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5035-5040

  Ibuka, Shigeo ^a   Tajima, Michio ^a  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDES; DECAY MECHANISMS; ELECTRON-HOLE DROPLETS; EXCITATION INTENSITY; FREE EXCITONS; LUMINESCENCE DECAYS; SILICON ON INSULATOR WAFERS; SOI WAFERS; SUPERFICIAL SI; TEMPORAL DECAY; TIME-RESOLVED; ULTRAVIOLET LIGHT EXCITATION;

DECAY (ORGANIC); LUMINESCENCE; SPECTROSCOPIC ANALYSIS; ULTRAVIOLET RADIATION;

SILICON WAFERS;

EID: 0037091661     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1462848     Document Type: Article

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