메뉴 건너뛰기




Volumn 63, Issue 19, 2001, Pages

Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si

Author keywords

[No Author keywords available]

Indexed keywords

ION; SILICON;

EID: 0034899614     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.195206     Document Type: Review
Times cited : (78)

References (37)
  • 7
    • 84917805921 scopus 로고    scopus 로고
    • University of Delft, The Netherlands
    • H. G. Huizing, Ph.D. dissertation, University of Delft, The Netherlands, 1996.
    • (1996) Ph.D. Dissertation
    • Huizing, H.G.1
  • 16
    • 33744692831 scopus 로고    scopus 로고
    • edited by T. Diaz dela Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, MRS Symposia Proceedings No. 469, Materials Research Society, Pittsburgh
    • J. L. Benton, S. Libertino, D. J. Eaglesham, and S. Coffa, in Defects and Diffusion in Silicon Processing, edited by T. Diaz dela Rubia, S. Coffa, P. A. Stolk, and C. S. Rafferty, MRS Symposia Proceedings No. 469 (Materials Research Society, Pittsburgh, 1997), p. 193.
    • (1997) Defects and Diffusion in Silicon Processing , pp. 193
    • Benton, J.L.1    Libertino, S.2    Eaglesham, D.J.3    Coffa, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.