Trap states in oxidation layer of nanocrystal Si

Chinese Physics B

Volumn 17, Issue 10, 2008, Pages 3753-3758

  Huang, Wei Qi ^a   Wang, Hai Xu ^a   Jin, Feng ^a   Qin, Cao Jian ^b  

^a GUIZHOU UNIVERSITY   (China)

^b INSTITUTE OF GEOCHEMISTRY   (China)

Author keywords

Photoluminescence; Porous silicon; Trap states

Indexed keywords

CHEMICAL OXYGEN DEMAND; LIGHT EMISSION; LUMINESCENCE; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; OXIDATION; PHOTOEXCITATION; PHOTOLUMINESCENCE; POROUS SILICON;

BAND GAPS; H BONDS; NANOCRYSTAL SI; NEAR INFRARED; OXIDATION LAYERS; PINNING EFFECTS; PL BANDS; PL EMISSIONS; PL INTENSITIES; RELATIVE POSITIONS; SILICON NANOCRYSTALS; THEORETICAL MODELS; TRAP STATES; ULTRA VIOLETS;

SILICON;

EID: 56349162630     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/10/037     Document Type: Article

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