Electronic band transformation from indirect gap to direct gap in Si H compound

Chinese Physics B

Volumn 19, Issue 7, 2010, Pages

  Ding, Jian Ning ^a,b,d   Wang, Jun Xiong ^b   Yuan, Ning Yi ^a,b,d   Kan, Biao ^b   Chen, Xiao Shuang ^c  

^a CHANGZHOU UNIVERSITY   (China)

^b JIANGSU UNIVERSITY   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^d Key Laboratory of New Energy Engineering   (China)

Author keywords

Band structure; Density functional theory; Si H compounds; Tight binding calculation

Indexed keywords

ATOMIC CHARGE; DENSITY FUNCTIONALS; DENSITY OF STATE; DIRECT-GAP SEMICONDUCTOR; ELECTRONIC BAND; ELECTRONIC BAND STRUCTURE; H-CONTENT; NEAREST NEIGHBOUR; PARTIAL DENSITY OF STATE; PERIODIC MODELS; SEMI-EMPIRICAL; SI-H COMPOUNDS; SI-SI BONDS; TIGHT BINDING; TIGHT-BINDING CALCULATIONS;

BAND STRUCTURE; CHEMICAL BONDS; SEMICONDUCTING SILICON;

DENSITY FUNCTIONAL THEORY;

EID: 78649291179     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/7/077103     Document Type: Article

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