On the temperature dependence of point-defect-mediated luminescence in silicon

Applied Physics Letters

Volumn 94, Issue 25, 2009, Pages

  Recht, Daniel ^a   Capasso, Federico ^a   Aziz, Michael J ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUND EXCITON; ROOM TEMPERATURE; SEMICONDUCTOR PHYSICS; TEMPERATURE DEPENDENCE;

LIGHT; LUMINESCENCE; SEMICONDUCTING SILICON; TEMPERATURE DISTRIBUTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 67649472565     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3157277     Document Type: Article

References (11)

1. J. M. Shainline and J. M. Xu, Laser Photonics Rev. 1863-8880 1, 334 (2007). 10.1002/lpor.200710021
2. J. Bao, M. Tabbal, T. Kim, S. Charnvanichborikarn, J. Williams, M. J. Aziz, and F. Capasso, Opt. Express 1094-4087 15, 6728 (2007).
3. S. G. Cloutier, P. A. Kossyrev, and J. M. Xu, Nature Mater. 1476-1122 4, 887 (2005). 10.1038/nmat1530
4. E. Rotem, J. M. Shainline, and J. M. Xu, Appl. Phys. Lett. 0003-6951 91, 051127 (2007). 10.1063/1.2766843
5. P. K. Giri, Semicond. Sci. Technol. 0268-1242 20, 638 (2005). 10.1088/0268-1242/20/6/027
6. G. Davies, H. Brian, E. C. Lightowlers, K. Barraclough, and M. F. Thomaz, Semicond. Sci. Technol. 0268-1242 4, 200 (1989). 10.1088/0268-1242/4/3/010
7. This assumes that the defect binds carriers in a definite order, e.g., a hole and then an electron.
8. This is consistent with electrically or optically pumped luminescence and an undoped active region.
9. R. F. Pierret, Advanced Semiconductor Fundamentals, 2nd ed. (Prentice Hall, Upper Saddle River, 2003).
10. To consider the opposite case, interchange (NC / ge) e (Ee-Eg) / kB T and (NV / gh) e- Eh / kB T in Eq..
11. Ignoring stimulated emission.