Photoluminescence signature of silicon interstitial cluster evolution from compact to extended structures in ion-implanted silicon

Semiconductor Science and Technology

Volumn 20, Issue 6, 2005, Pages 638-644

  Giri, P K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY GUWAHATI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; EPITAXIAL GROWTH; IMPURITIES; PHONONS; PHOTOLUMINESCENCE; QUENCHING; SILICON;

CLUSTER RIPENING PROCESS; ION-IMPLANTED SILICON; OPTICAL SIGNATURES; POST-IMPLANTATION PROCESSING;

ION IMPLANTATION;

EID: 18744393821     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/6/027     Document Type: Article

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