Identification of the tetra-interstitial in silicon

Journal of Physics Condensed Matter

Volumn 13, Issue 1, 2001, Pages

  Coomer, B J ^a   Goss, J P ^a   Jones, R ^a   Oberg S ^b   Briddon, P R ^c  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONIC PROPERTIES; ION IMPLANTATION; MOLECULAR VIBRATIONS; OPTICAL PROPERTIES; POINT DEFECTS;

TETRA-INTERSTITIALS;

SEMICONDUCTING SILICON;

EID: 0035127690     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/13/1/101     Document Type: Article

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