A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Yu, X ^a,b   Seifert, W ^a,b   Vyvenko, O F ^a,b   Kittler, M ^a,b   Wilhelm, T ^c   Reiche, M ^c  

^a INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING INTERFACES; DISLOCATION NETWORK; ENERGY-BAND DIAGRAMS; LIGHT-EMITTING DIODE; METAL OXIDES; METAL-GATE ELECTRODES; MOS TUNNELING; NEGATIVE BIAS; NEGATIVE GATE; POTENTIAL WELLS; SILICON-BASED PHOTONICS; TUNNELING STRUCTURE;

ATOMS; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ENERGY EFFICIENCY; EXCAVATION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; METALS; NONMETALS; PHOTONICS; PHYSICAL OPTICS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; TUNNEL DIODES; TUNNELING (EXCAVATION);

SEMICONDUCTING SILICON COMPOUNDS;

EID: 49149086634     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965126     Document Type: Article

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