ESR signature of tetra-interstitial defect in silicon

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 263-266

  Mchedlidze, T ^a   Yonenaga, I ^a   Suezawa, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Clusters; Defects in silicon; ESR; Intrinsic defects

Indexed keywords

AGGLOMERATION; ANNEALING; DOPING (ADDITIVES); ELECTRON IRRADIATION; HYDROGEN; LIGHTING; MICROWAVES; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PROTONS;

CLUSTERS; DEFECTS IN SILICON; INTRINSIC DEFECTS;

SILICON;

EID: 1842431475     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.07.015     Document Type: Conference Paper

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