Photoluminescence evolution in self-ion-implanted and annealed silicon

Chinese Physics B

Volumn 18, Issue 11, 2009, Pages 4906-4911

  Yang, Yu ^a,b   Wang, Chong ^a   Yang, Rui Dong ^a   Li, Liang ^a   Xiong, Fei ^a   Bao, Ji Ming ^b  

^a YUNNAN UNIVERSITY   (China)

^b HARVARD UNIVERSITY   (United States)

Author keywords

Defects; Photoluminescence; Self ion implanted; Silicon

Indexed keywords

DEEP ENERGY LEVELS; EMISSION PEAKS; FORBIDDEN BAND; ION-IMPLANTED SILICON; OPTICAL FEATURES; PL SPECTRA; ROOM TEMPERATURE; SELF-ION-IMPLANTED; TEMPERATURE RANGE;

ANNEALING; DEFECTS; IONS; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 70449727632     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/11/048     Document Type: Article

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