Impact of the current density increase on reliability in scaled BJT-selected PCM for high-density applications

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 615-619

  Redaelli, A ^a   Pirovano, A ^a   Tortorelli, I ^a   Ottogalli, F ^a   Ghetti, A ^a   Laurin, L ^a   Benvenuti, A ^a  

^a Numonyx   (Italy)

Author keywords

BJT selector; Heater degradation; PCM endurance; Phase Change Memory; Reliability

Indexed keywords

32 NM TECHNOLOGY; 65-NM NODE; BJT SELECTOR; DENSITY ARRAY; HEATER DEGRADATION; HIGH-DENSITY APPLICATIONS; MAXIMUM CURRENT DENSITY; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY TECHNOLOGY; PCM ENDURANCE; PHASE-CHANGE MEMORY TECHNOLOGIES; PHYSICAL MECHANISM; ROADMAP; SEMICONDUCTOR COMPANIES; SILICON DIODES; STORAGE ELEMENTS; TECHNOLOGY SCALING;

BIPOLAR TRANSISTORS; CURRENT DENSITY; DEGRADATION; DIODES; DURABILITY; FLASH MEMORY; LITHOGRAPHY; NANOTECHNOLOGY; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; TECHNOLOGY;

PHASE CHANGE MEMORY;

EID: 77957918519     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488760     Document Type: Conference Paper

References (8)

1. F. Pellizzer et al., Symp. on VLSI Tech., pp. 150-151, 2006.
2. Oh J. H. et al., IEDM Tech. Dig., 49-52, 2006
3. G. Servalli, IEDM Tech. Dig., pp. 113-116, 2009.
4. U. Russo et al., Transactions on Electron Devices, Vol. 55, n 2, pp. 506-514, 2008
5. A. Pirovano, IEDM Tech. Dig., pp. 699-702, 2003.
6. ITRS 2008 update, http://www.itrs.net/Links/2008ITRS/Home2008.htm.
7. C. Kim et al., Applied Physics Letters, (94) 193504-1/193504-3
8. M. Boniardi et al., Accepted to IMW 2010