Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Cagli, C ^a   Ielmini, D ^a   Nardi, F ^a   Lacaita, A L ^b  

^a POLITECNICO DI MILANO   (Italy)

^b IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC TRANSITIONS; EXPERIMENTAL EVIDENCES; HIGH CONDUCTANCE STATE; HIGH VOLTAGES; NEW PHYSICS; PHYSICAL MODELING; PROGRAMMING VOLTAGES; THRESHOLD SWITCHING;

DATA STORAGE EQUIPMENT; MODELS;

ELECTRON DEVICES;

EID: 64549145384     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796678     Document Type: Conference Paper

References (11)

1. D. C. Kim, et al., Appl. Phys. Lett., vol. 88, p. 202102, 2006.
2. U. Russo, et al.,in IEDM Tech. Dig., pp. 775-778, 2007.
3. J.-B. Yun, et al., Phys. Stat. Sol., vol. 6, pp. 280-282, 2007.
4. T.-N. Fang, et al.,in IEDM Tech. Dig., pp. 789-792, 2006.
5. D. Ielmini, et al., IEEE Electron Device Letters, vol. 26, pp. 799-801, 2005.
6. D. Ielmini, Phys. Rev. B, vol. 78, p. 035308, 2008.
7. S. Spiga, et al.,in Proc. EMRS, 2008.
8. Y. Hosoi, et al.,in IEDM Tech. Dig., pp. 793-796, 2006.
9. S. Lombardo, et al., J. Appl. Phys., vol. 98, p. 121301, 2005.
10. D. Ielmini, et al., IEEE Electron Device Lett., vol. 29, pp. 568-570, 2008.
11. S. Lavizzari, et al.,in IEDM Tech. Dig., 2008. Paper 9.3.