In-situ studies of ALD growth of hafnium oxide films

Advanced Engineering Materials

Volumn 11, Issue 4, 2009, Pages 265-268

  Karavaev, Konstantin ^a   Kolanek, Krzysztof ^a   Tallarida, Massimo ^a   Schmeißer, Dieter ^a   Zschech, Enrenfried ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ALD GROWTHS; ATOMIC FORCES; ATOMIC LAYERS; CHEMICAL INFORMATIONS; COMPARATIVE STUDIES; FREE SURFACES; GROWTH CHARACTERISTICS; GROWTH FEATURES; HAFNIUM OXIDE FILMS; IN-SITU; IN-SITU STUDIES; INTERFACIAL LAYERS; OXIDE THICKNESS; SI(0 0 1); ULTRA-HIGH VACUUMS;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CRYSTALLOGRAPHY; HAFNIUM; HAFNIUM COMPOUNDS; OXIDE FILMS; SILICON; SUBSTRATES; SURFACES; ULTRAHIGH VACUUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 64749111049     PISSN: 14381656     EISSN: 15272648     Source Type: Journal    
DOI: 10.1002/adem.200800348     Document Type: Article

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