Conformal oxides on Si surfaces

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1495-1497

  Tsai, Vincent ^a   Wang, X S ^a,c   Williams, Ellen D ^a,c   Schneir, J ^b,d   Dixson, R ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c Inst for Phys Sci and Technology   (United States)

^d KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000025964     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119947     Document Type: Article

References (30)

1. S. Zafar, Q. Liu, and E. A. Irene, J. Vac. Sci. Technol. A 13, 47 (1995).
2. M. Suzuki, Y. Homma, Y. Judoh, and N. Yabumoto, Jpn. J, Appl. Phys., Part 1 32, 1419 (1993).
3. G. J. Pietsch, U. Kohler, O. Jusko, and M. Henzler, Appl. Phys. Lett. 60, 1321 (1992).
4. O. Jusko, P. Marienhoff, and M. Henzler, Appl. Surf. Sci. 40, 295 (1990).
5. Y. Homma, M. Suzuki, and N. Yabumoto, J. Vac. Sci. Technol. A 10, 2055 (1992).
6. G. S. Shekhawat, R. P. Gupta, S. S. Shekhawat, D. P. Runthala, P. D. Vyas, P. Srivastava, S. Venkatesh, K. Mamhoud, and K. B. Garg, Appl. Phys. Lett. 68, 114 (1996).
7. T. Hattori and K. Ohishi, Mater. Res. Soc. Symp. Proc. 318, 61 (1994).
8. J. Sehneir, T. McWaid, R. Dixson, V. W. Tsai, J. S. Villarrubia, E. D. Williams, and E. Fu, Proc. SPIE 2439, 401 (1995).
9. M. Suzuki, S. Aoyama, T. Futatsuki, A. J. Kelly, T. Osada, A. Nakano, Y. Sakakibara, Y. Suzuki, H. Takami, T. Takenobu, and M. Yasutake, J. Vac. Sci. Technol. A 14, 1228 (1996).
10. M. Suzuki, Y. Kudoh, Y. Homma, and R. Kaneko, Appl. Phys. Lett. 58. 2225 (1991).
11. M. Suzuki, Y. Homma, Y. Kudoh, and R. Kaneko, Ultramicroscopy 42-44, 940 (1992).
12. M. R. Rodgers, E. Strausser, and K. J. Kjoller, SEMI'94: Particles, Haze and Micmroughness on Si Wafers (Semiconductor Equipment and Materials International, Mountain View, CA, 1994), p. 133.
13. P. J. Rous, in Cohesion and Structure of Surfaces, edited by D. G. Pettifor (Elsevier Science, Amsterdam, 1995). p. 1.
14. M. Henzler and J. Clabes, Jpn. J. Appl. Phys., Part 1 389 (1974).
15. R. J. Phaneuf and E. D. Williams, Phys. Rev. B 35, 4155 (1987).
16. X.-S. Wang, J. L. Goldberg, N. C. Bartelt, T. L. Einstein, and E. D. Williams, Phys. Rev. Lett. 65, 2430 (1990).
17. A. V. Latyshev, A. L. Aseev, A. B. Krasilnikov, and S. I. Stenin, Surf. Sci. 213, 157 (1989).
18. Y. Homma and M. Suzuki, Appl. Surf. Sci. 60/61, 479 (1992).
19. Y.-N. Yang, E. S. Fu, and E. D. Williams, Surf. Sci. 356, 101 (1996).
20. M. Ichikawa and T. Doi, Appl. Phys. Lett. 60, 1082 (1992).
21. M. Mundschau, E. Bauer, W. Telieps, and W. Swiech, Philos. Mag. A 61, 257 (1990).
22. Y.-N. Yang and E. D. Williams, J. Vac. Sci. Technol. A 8, 2481 (1990).
23. R. J. Phaneuf and E. D. Williams, Phys. Rev. Lett. 58, 2563 (1987).
24. D. Y. Noh, K. I. Blum, M. J. Ramstad, and R. J. Birgeneau, Phys. Rev. B 44, 10 969 (1991).
25. Y.-N. Yang and E. D. Williams, Phys. Rev. Lett. 72, 1862 (1994).
26. T. Fukuda, Jpn. J. Appl. Phys., Part 1 33, L797 (1994).
27. R. J. Phaneuf, N. C. Bartelt, E. D. Williams, W. Swiech, and E. Bauer, Phys. Rev. Lett. 21, 2986 (1991).
28. H. Hibino, Y. Shinoda, Y. Kobayashi, and K. Sugii, Jpn. J. Appl. Phys., Part 1 30, 1337 (1991).
29. H. J. W. Zandvliet, H. B. Elswijk, and E. J. van Loenen, Phys. Rev. B 45, 5965 (1992).
30. B. S. Swartzentruber, Phys. Rev. 47, 13 432 (1993).