Analysis of SiO2/Si(001) interface roughness for thin gate oxides by scanning tunneling microscopy

Applied Physics Letters

Volumn 81, Issue 3, 2002, Pages 430-432

  Gotoh, Masahide ^a   Sudoh, Koichi ^a   Itoh, Hiroyasu ^b   Kawamoto, Kazunori ^b   Iwasaki, Hiroshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL OXIDE; CORRELATION LENGTHS; GATE OXIDE; INTERFACE ROUGHNESS; LENGTH SCALE; RMS ROUGHNESS; SCALING ANALYSIS; SCANNING TUNNELING MICROSCOPY (STM); THERMAL OXIDATION; THERMAL OXIDES; THIN GATE OXIDES;

CHEMICAL ANALYSIS; GATES (TRANSISTOR); INTERFACES (MATERIALS); SILICON; SILICON COMPOUNDS; SOIL STRUCTURE INTERACTIONS; SUBSTRATES;

SCANNING TUNNELING MICROSCOPY;

EID: 79956015676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494124     Document Type: Article

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