Electronic properties of BaTiO3/4H-SiC interface

Materials Science and Engineering: B

Volumn 176, Issue 4, 2011, Pages 301-304

  Sochacki, M ^a   Firek, P ^a   Kwietniewski, N ^a   Szmidt, J ^a   Rzodkiewicz, W ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

Barium titanate; Electrical measurements; Electron states; Silicon carbide

Indexed keywords

BARIUM TITANATE; CAPACITANCE; ELECTRONIC PROPERTIES; HIGH-K DIELECTRIC; INTERFACE STATES; LANTHANUM OXIDES; METAL INSULATOR BOUNDARIES; MIS DEVICES; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS;

4H SILICON CARBIDE; ADMIXTURE; ELECTRICAL MEASUREMENT; FILM QUALITY; FILMS PROPERTIES; GATE INSULATOR; HIGH RESISTIVITY; HIGH- K; METAL-INSULATOR-SEMICONDUCTOR STRUCTURES; THIN-FILMS;

SILICON CARBIDE;

EID: 79951857294     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.08.012     Document Type: Article

References (29)

1. A. Gavrikov, A. Knizhnik, A. Safonov, A. Scharbinin, A. Bagaturiants, B. Potapkin, A. Chatterjee, and K. Matocha Journal of Applied Physics 104 2008 093508
2. Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, and T. Hattori Journal of Applied Physics 100 2006 053710
3. P.T. Lai, J.P. Xu, and C.L. Chan IEEE Electron Device Letters 23 2002 410 412
4. P. Jamet, S. Dimitrijev, and P. Tanner Journal of Applied Physics 90 2001 5058 5063
5. J.P. Xu, P.T. Lai, C.L. Chan, and Y.C. Cheng Applied Physics Letters 76 2000 372 374
6. V.V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K.Y. Cheong, and S. Dimitrijev Applied Physics Letters 82 2003 568 570
7. K. Fukuda, W.J. Cho, K. Arai, S. Suzuki, J. Senzaki, and T. Tanaka Applied Physics Letters 77 2000 866 868
8. B.L. Yang, L.M. Lin, H.B. Lo, and P.T. Lai Solid-State Electronics 49 2005 1223 1227
9. A. Chatterjee, and K. Matocha Materials Science Forum 615-617 2009 493 496
10. E. Takashi, E. Okuno, T. Sakakibara, and S. Onda Materials Science Forum 600-603 2008 691 694
11. C.A. Correa, G.G. Marmitt, N.M. Bom, A.T. da Rosa, F.C. Stadile, C. Radtke, G.V. Soares, J.R. Baumvol, C. Krug, and A.L. Gobbi Applied Physics Letters 95 2009 051916
12. M.W. Wolborski, M. Rooth, M. Bakowski, and A. Hallen Journal of Applied Physics 101 2007 124105
13. T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura, S. Mitani, Y. Nakano, T. Nakamura, and H. Watanabe Materials Science Forum 615-617 2009 541 544
14. P. Firek, A. Werbowy, and J. Szmidt Materials Science and Engineering B 2009 10.1016/j.mseb.2009.02.018
15. S.M. Sze, and K. Ng Physics of Semiconductor Devices 2007 Wiley Interscience
16. B. Majkusiak, and A. Jakubowski Solid-State Electronics 35 1992 223 224
17. R.E. Avila, J.V. Caballero, V.M. Fuenzalida, and I. Eisele Thin Solid Films 348 1999 44 48
18. W.V. Gelder, and E.H. Nicollian J. Electrochem. Soc. 118 1971 138 141
19. L.M. Terman Solid State Electronics 5 1962 285
20. S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, P.A. Ivanov, J.W. Palmour, M.K. Das, and B.A. Hull Mat. Sci. Forum 615-617 2009 817 820
21. N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, and K. Kawano Mat. Sci. Forum 615-617 2009 517 520
22. S. Berberich, P. Godignon, M.L. Locatelli, J. Millan, and H.L. Hartnagel Solid-State Electronics 42 1998 915 920
23. L.A. Lipkin, and J.W. Palmour J. Electron. Mat. 25 1996 909 915
24. J.A. Cooper Jr. Phys. Stat. Sol. (a) 162 1997 305 320
25. T. Ouisse, N. Becourt, C. Jaussaud, and F. Templier J. Appl. Phys. 75 1994 604 607
26. E.H. Nicollian, and A. Goetzberger Appl. Phys. Lett. 7 1965 216 219
27. H.M. Przewłocki, S. Krawczyk, and A. Jakubowski Physica Status Solidi A 65 1981 253 257
28. F. El Kamel, P. Gonon, and B. Yangui Materials Science in Semiconductor Processing 9 2006 918 922
29. J. Bubesh, G. Madeswaran, X.L. Chan, and R. Dhanasekaran Materials Science and Engineering B 156 2009 36 41