Charge transport and trapping in BaTiO3 thin films flash evaporated on Si and SiO2/Si

Thin Solid Films

Volumn 348, Issue 1, 1999, Pages 44-48

  Avila, R E ^a   Caballero, J V ^b   Fuenzalida, V M ^c   Eisele, I ^d  

^a Chilean Nuclear Energy Commission   (Chile)

^b UNIVERSIDAD DE SANTIAGO DE CHILE   (Chile)

^c DEPARTAMENTO DE FÍSICA   (Chile)

^d BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; BARIUM TITANATE; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; EVAPORATION; PERMITTIVITY; REFRACTIVE INDEX; SILICA; SILICON;

BIAS STRESS; CAPACITANCE VOLTAGE CURVE SHIFTS; CHARGE TRANSPORT; ELECTRON INJECTION; EXTINCTION COEFFICIENT; FLASH EVAPORATION; SCHOTTKY EFFECT; ULTRA HIGH VACUUM;

THIN FILMS;

EID: 0032631031     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00007-3     Document Type: Article

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