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Volumn 165, Issue 1-2, 2009, Pages 126-128
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MIS field effect transistor with barium titanate thin film as a gate insulator
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Author keywords
Barium titanate; I V characteristics; MISFET structures; Radio frequency plasma sputtering
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Indexed keywords
LANTHANUM OXIDES;
METAL INSULATOR BOUNDARIES;
MICROELECTRONICS;
MIS DEVICES;
RADIO WAVES;
THIN FILMS;
THRESHOLD VOLTAGE;
TRANSISTORS;
BARIUM TITANATE THIN FILMS;
FIELD EFFECT TRANSISTOR STRUCTURES;
FIELD-EFFECT TRANSISTOR;
GATE INSULATOR;
I-V CHARACTERISTIC;
METAL INSULATOR SEMICONDUCTOR FIELD EFFECT TRANSISTOR STRUCTURE;
METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS;
PLASMA SPUTTERING;
RADIO FREQUENCY PLASMA;
RADIO FREQUENCY PLASMA SPUTTERING;
BARIUM TITANATE;
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EID: 71749117755
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mseb.2009.02.018 Document Type: Article |
Times cited : (7)
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References (13)
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