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Volumn 165, Issue 1-2, 2009, Pages 126-128

MIS field effect transistor with barium titanate thin film as a gate insulator

Author keywords

Barium titanate; I V characteristics; MISFET structures; Radio frequency plasma sputtering

Indexed keywords

LANTHANUM OXIDES; METAL INSULATOR BOUNDARIES; MICROELECTRONICS; MIS DEVICES; RADIO WAVES; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS;

EID: 71749117755     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.02.018     Document Type: Article
Times cited : (7)

References (13)
  • 5
    • 0012273415 scopus 로고    scopus 로고
    • Barium titanate-past, present and future
    • Dielectric Ceramic Materials '98
    • A. Rae, M. Chu, V. Ganine, Barium titanate-past, present and future, in: Ceramic Transactions, vol. 100, Dielectric Ceramic Materials '98, 1999, pp. 1-12.
    • (1999) Ceramic Transactions , vol.100 , pp. 1-12
    • Rae, A.1    Chu, M.2    Ganine, V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.