AlON/SiO2 stacked gate dielectrics for 4H-SiC MIS devices

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 541-544

  Hosoi, Takuji ^a   Harada, Makoto ^a   Kagei, Yusuke ^a   Watanabe, Yuu ^a   Shimura, Takayoshi ^a   Mitani, Shuhei ^b   Nakano, Yuki ^b   Nakamura, Takashi ^b   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

Aluminum oxynitride (ALON); High k dielectrics; Interface property; Leakage current; MIS; MOS

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC FIELDS; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; LOW-K DIELECTRIC; MANAGEMENT INFORMATION SYSTEMS; MIS DEVICES; MOLYBDENUM; NITRIDES; REACTIVE SPUTTERING; SILICA; SILICON CARBIDE; SILICON OXIDES;

ALUMINUM OXYNITRIDE; CAPACITANCE-VOLTAGE HYSTERESIS; FLAT-BAND VOLTAGE SHIFT; GATE LEAKAGE REDUCTION; HIGH DIELECTRIC CONSTANTS; INTERFACE PROPERTY; NEGATIVE FIXED CHARGE; STACKED GATE DIELECTRICS;

GATE DIELECTRICS;

EID: 77955461840     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.541     Document Type: Conference Paper

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