Enhancement in interface robustness regarding thermal oxidation in nanostructured Al2O3 deposited on 4H-SiC

Applied Physics Letters

Volumn 95, Issue 5, 2009, Pages

  Corra S A ^a   Marmitt, G G ^a   Bom, N M ^a   Da Rosa, A T ^a   Stedile, F C ^a   Radtke, C ^a   Soares, G V ^b   Baumvol, I J R ^a,b   Krug, C ^a   Gobbi, A L ^c  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c LABORATÓRIO NACIONAL DE LUZ SÍNCROTRON   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANNEALING; CRYSTAL ATOMIC STRUCTURE; ENERGY GAP; SILICA; SILICATES; THERMOOXIDATION;

ATOMIC TRANSPORT; ENHANCED STABILITY; EXPERIMENTAL EVIDENCE; HIGH TEMPERATURE; OXYGEN DIFFUSION; THERMAL OXIDATION; THERMAL-ANNEALING; THIN-FILM STRUCTURE;

SILICON CARBIDE;

EID: 68349131537     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3195702     Document Type: Article

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