High frequency CV measurements of SiC MOS capacitors

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 915-920

  Berberich, S ^a   Godignon, P ^a   Locatelli, M L ^b   Millan J ^a   Hartnagel, H L ^c  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b UNIVERSITÉ DE LYON   (France)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL ORIENTATION; ELECTRIC CONDUCTANCE; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SILICA; SILICON CARBIDE; SUBSTRATES; VOLTAGE MEASUREMENT;

TERMAN METHOD;

MOS CAPACITORS;

EID: 0032092374     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00122-1     Document Type: Article

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