Transient currents induced in 6H-SiC MOS capacitors by oxygen ion incidence

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 517-520

  Iwamoto, N ^a,b   Onoda, S ^b   Ohshima, T ^b   Kojima, K ^c   Kawano, K ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

6H SiC; MOS capacitor; Single event effect (SEE); Transient current

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC FAULT CURRENTS; GAMMA RAYS; IRRADIATION; MOS CAPACITORS; OXYGEN; RADIATION HARDENING; SILICON CARBIDE;

6H-SIC; DIFFUSION LENGTH; DRIFT-DIFFUSION MODEL; GAMMA-RAY IRRADIATION; SIC MOS CAPACITOR; SINGLE EVENT EFFECTS; SINGLE-EVENT TRANSIENT CURRENTS; TRANSIENT CURRENT;

TRANSIENTS;

EID: 78650419827     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.517     Document Type: Conference Paper

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