SCOPUS 정보 검색 플랫폼

Volumn 615 617, Issue , 2009, Pages 817-820

Low frequency noise in 4H-SiC MOSFETs

(7) Rumyantsev, Sergey L a Shur, Michael S a Levinshtein, Michael E b Ivanov, Pavel A b Palmour, John W c Das, Mrinal K c Hull, Brett A c

a RENSSELAER POLYTECHNIC INSTITUTE (United States)

b IOFFE INSTITUTE (Russian Federation)

c Arkansas Power Electronics International Inc (United States)

Author keywords

Bulk and interface states; Channel mobility; Low frequency noise; MOSFET

Indexed keywords

DRAIN CURRENT; INTERFACE STATES; MOSFET DEVICES; SPURIOUS SIGNAL NOISE;

CHANNEL MOBILITY; CONDUCTION BAND EDGE; DENSITY OF LOCALIZED STATE; EFFECTIVE CHANNEL MOBILITIES; LOW-FREQUENCY NOISE; MOS-FET; SPECTRAL NOISE DENSITIES; STRONG INVERSION;

SILICON CARBIDE;

EID: 79251566479 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.615-617.817 Document Type: Conference Paper

Times cited : (1)

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