Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC

Solid-State Electronics

Volumn 49, Issue 7, 2005, Pages 1223-1227

  Yang, B L ^a   Lin, L M ^a   Lo, H B ^a   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Flat band voltage; Interface state density; Oxide charge density; Silicon carbide; TCE oxidation

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC CHARGE; INTERFACES (MATERIALS); MOSFET DEVICES; OXIDATION; SILICA; SILICON CARBIDE; THRESHOLD VOLTAGE;

FLAT-BAND VOLTAGE; INTERFACE-STATE DENSITY; OXIDE-CHARGE DENSITY; TCE OXIDATION;

ETHYLENE;

EID: 21444438448     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.05.010     Document Type: Article

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