-
1
-
-
0038137285
-
Single gallium nitride nanowire lasers
-
Johnson, J. C. et al. Single gallium nitride nanowire lasers. Nature Mater. 1, 106-110 (2002).
-
(2002)
Nature Mater
, vol.1
, pp. 106-110
-
-
Johnson, J.C.1
-
2
-
-
27144513329
-
Multiplexed electrical detection of cancer markers with nanowire sensor arrays
-
Zheng, G. F., Patolsky, F., Cui, Y., Wang, W. U. & Lieber, C. M. Multiplexed electrical detection of cancer markers with nanowire sensor arrays. Nat. Biotechnol. 23, 1294-1301 (2005).
-
(2005)
Nat. Biotechnol
, vol.23
, pp. 1294-1301
-
-
Zheng, G.F.1
Patolsky, F.2
Cui, Y.3
Wang, W.U.4
Lieber, C.M.5
-
3
-
-
23144434514
-
Optically bright quantum dots in single nanowires
-
Borgstrom, M. T., Zwiller, V., Muller, E. & Imamoglu, A. Optically bright quantum dots in single nanowires. Nano Lett. 5, 1439-1443 (2005).
-
(2005)
Nano Lett
, vol.5
, pp. 1439-1443
-
-
Borgstrom, M.T.1
Zwiller, V.2
Muller, E.3
Imamoglu, A.4
-
4
-
-
33747040811
-
Supercurrent reversal in quantum dots
-
van Dam, J. A., Nazarov, Y. V., Bakkers, E. P. A. M., De Franceschi, S. & Kouwenhoven, L. P. Supercurrent reversal in quantum dots. Nature 442, 667-670 (2006).
-
(2006)
Nature
, vol.442
, pp. 667-670
-
-
van Dam, J.A.1
Nazarov, Y.V.2
Bakkers, E.P.A.M.3
De Franceschi, S.4
Kouwenhoven, L.P.5
-
5
-
-
33847712282
-
Single quantum dot nanowire LEDs
-
Minot, E. D. et al. Single quantum dot nanowire LEDs. Nano Lett. 7, 367-371 (2007).
-
(2007)
Nano Lett
, vol.7
, pp. 367-371
-
-
Minot, E.D.1
-
6
-
-
1642487736
-
Growth and structure of chemically vapor deposited Ge nanowires on Si substrates
-
Kamins, T. I., Li, X. & Williams, R. S. Growth and structure of chemically vapor deposited Ge nanowires on Si substrates. Nano Lett. 4, 503-506 (2004).
-
(2004)
Nano Lett
, vol.4
, pp. 503-506
-
-
Kamins, T.I.1
Li, X.2
Williams, R.S.3
-
7
-
-
7544241259
-
Epitaxial III-V nanowires on silicon
-
Martensson, T. et al. Epitaxial III-V nanowires on silicon. Nano Lett. 4, 1987-1990 (2004).
-
(2004)
Nano Lett
, vol.4
, pp. 1987-1990
-
-
Martensson, T.1
-
8
-
-
16544366658
-
Epitaxial growth of InP nanowires on germanium
-
Bakkers, E. P. et al. Epitaxial growth of InP nanowires on germanium. Nature Mater. 3, 769-773 (2004).
-
(2004)
Nature Mater
, vol.3
, pp. 769-773
-
-
Bakkers, E.P.1
-
9
-
-
33751122778
-
Vapor-liquid-solid mechanism of single crystal growth
-
Wagner, R. S. & Ellis, W. C. Vapor-liquid-solid mechanism of single crystal growth. Appl. Phys. Lett. 4, 89-90 (1964).
-
(1964)
Appl. Phys. Lett
, vol.4
, pp. 89-90
-
-
Wagner, R.S.1
Ellis, W.C.2
-
10
-
-
5444245579
-
Solid-phase diffusion mechanism for GaAs nanowire growth
-
Persson, A. I. et al. Solid-phase diffusion mechanism for GaAs nanowire growth. Nature Mater. 3, 677-681 (2004).
-
(2004)
Nature Mater
, vol.3
, pp. 677-681
-
-
Persson, A.I.1
-
11
-
-
33644780780
-
The influence of the surface migration of gold on the growth of silicon nanowires
-
Hannon, J. B., Kodambaka, S., Ross, F. M. & Tromp, R. M. The influence of the surface migration of gold on the growth of silicon nanowires. Nature 440, 69-71 (2006).
-
(2006)
Nature
, vol.440
, pp. 69-71
-
-
Hannon, J.B.1
Kodambaka, S.2
Ross, F.M.3
Tromp, R.M.4
-
12
-
-
31944435288
-
Growth kinetics of heterostructured GaP-GaAs nanowires
-
Verheijen, M. A., Immink, G., deSmet, T., Borgstrom, M. T. & Bakkers, E. P. A. M. Growth kinetics of heterostructured GaP-GaAs nanowires. J. Am. Chem. Soc. 128, 1353-1359 (2006).
-
(2006)
J. Am. Chem. Soc
, vol.128
, pp. 1353-1359
-
-
Verheijen, M.A.1
Immink, G.2
deSmet, T.3
Borgstrom, M.T.4
Bakkers, E.P.A.M.5
-
13
-
-
0010911965
-
Fundamental aspects of VLS growth
-
Givargizov, E. I. Fundamental aspects of VLS growth. J. Cryst. Growth 31, 20-30 (1975).
-
(1975)
J. Cryst. Growth
, vol.31
, pp. 20-30
-
-
Givargizov, E.I.1
-
14
-
-
3042816929
-
Silicon nanowhiskers grown on k111l Si substrates by molecular-beam epitaxy
-
Schubert, L. et al. Silicon nanowhiskers grown on k111l Si substrates by molecular-beam epitaxy. Appl. Phys. Lett. 84, 4968-4970 (2004).
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 4968-4970
-
-
Schubert, L.1
-
15
-
-
33744789859
-
Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires
-
Dubrovskii, V. G. & Sibirev, N. V. Growth rate of a crystal facet of arbitrary size and growth kinetics of vertical nanowires. Phys. Rev. E 70, 031604 (2004).
-
(2004)
Phys. Rev. E
, vol.70
, pp. 031604
-
-
Dubrovskii, V.G.1
Sibirev, N.V.2
-
16
-
-
17944376542
-
Growth rate of silicon nanowires
-
Kikkawa, J., Ohno, Y. & Takeda, S. Growth rate of silicon nanowires. Appl. Phys. Lett. 86, 123109 (2005).
-
(2005)
Appl. Phys. Lett
, vol.86
, pp. 123109
-
-
Kikkawa, J.1
Ohno, Y.2
Takeda, S.3
-
17
-
-
23144456810
-
Mass transport model for semiconductor nanowire growth
-
Johansson, J., Svensson, C. P. T., Martensson, T., Samuelson, L. & Seifert, W. Mass transport model for semiconductor nanowire growth. J. Phys. Chem. B 109, 13567-13571 (2005).
-
(2005)
J. Phys. Chem. B
, vol.109
, pp. 13567-13571
-
-
Johansson, J.1
Svensson, C.P.T.2
Martensson, T.3
Samuelson, L.4
Seifert, W.5
-
18
-
-
33644911816
-
Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires
-
Kodambaka, S., Tersoff, J., Reuter, M. C. & Ross, F. M. Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires. Phys. Rev. Lett. 96, 096105 (2006).
-
(2006)
Phys. Rev. Lett
, vol.96
, pp. 096105
-
-
Kodambaka, S.1
Tersoff, J.2
Reuter, M.C.3
Ross, F.M.4
-
19
-
-
0142016616
-
Self-organized fabrication of planar GaAs nanowhisker arrays
-
Haraguchi, K. et al. Self-organized fabrication of planar GaAs nanowhisker arrays. Appl. Phys. Lett. 69, 386-387 (1996).
-
(1996)
Appl. Phys. Lett
, vol.69
, pp. 386-387
-
-
Haraguchi, K.1
-
20
-
-
0347654987
-
Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth
-
Martensson, T., Borgstrom, M., Seifert, W., Ohlsson, B. J. & Samuelson, L. Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth. Nanotechnology 14, 1255-1258 (2003).
-
(2003)
Nanotechnology
, vol.14
, pp. 1255-1258
-
-
Martensson, T.1
Borgstrom, M.2
Seifert, W.3
Ohlsson, B.J.4
Samuelson, L.5
-
21
-
-
7544245915
-
Role of surface diffusion in chemical beam epitaxy of InAs nanowires
-
Jensen, L. E. et al. Role of surface diffusion in chemical beam epitaxy of InAs nanowires. Nano Lett. 4, 1961-1964 (2004).
-
(2004)
Nano Lett
, vol.4
, pp. 1961-1964
-
-
Jensen, L.E.1
-
22
-
-
4544376411
-
Vertical nanowire transistors with low leakage current
-
Chen, J., Klaumunzer, S., Lux-Steiner, M. C. & Konenkamp, R. Vertical nanowire transistors with low leakage current. Appl. Phys. Lett. 85, 1401-1403 (2004).
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 1401-1403
-
-
Chen, J.1
Klaumunzer, S.2
Lux-Steiner, M.C.3
Konenkamp, R.4
-
23
-
-
4143108889
-
Single crystal nanowire vertical surround-gate field-effect transistor
-
Ng, H. T. et al. Single crystal nanowire vertical surround-gate field-effect transistor. Nano Lett. 4, 1247-1252 (2004).
-
(2004)
Nano Lett
, vol.4
, pp. 1247-1252
-
-
Ng, H.T.1
-
24
-
-
0040744592
-
Homogeneous and heterogeneous thermal-decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD
-
Denbaars, S. P., Maa, B. Y., Dapkus, P. D., Danner, A. D. & Lee, H. C. Homogeneous and heterogeneous thermal-decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD. J. Cryst. Growth 77, 188-193 (1986).
-
(1986)
J. Cryst. Growth
, vol.77
, pp. 188-193
-
-
Denbaars, S.P.1
Maa, B.Y.2
Dapkus, P.D.3
Danner, A.D.4
Lee, H.C.5
-
25
-
-
0000195677
-
Surface reaction of trimethylgallium on GaAs
-
Nishizawa, J., Sakuraba, H. & Kurabayashi, T. Surface reaction of trimethylgallium on GaAs. J. Vac. Sci. Technol. B 14, 136-146 (1996).
-
(1996)
J. Vac. Sci. Technol. B
, vol.14
, pp. 136-146
-
-
Nishizawa, J.1
Sakuraba, H.2
Kurabayashi, T.3
-
26
-
-
0346429174
-
Pyrolytic and photolytic dissociation of trimethylgallium on Si and Au substrates
-
Shogen, S., Matsumi, Y., Kawasaki, M., Toyoshima, I. & Okabe, H. Pyrolytic and photolytic dissociation of trimethylgallium on Si and Au substrates. J. Appl. Phys. 70, 462-468 (1991).
-
(1991)
J. Appl. Phys
, vol.70
, pp. 462-468
-
-
Shogen, S.1
Matsumi, Y.2
Kawasaki, M.3
Toyoshima, I.4
Okabe, H.5
-
27
-
-
9944235378
-
Growth of one-dimensional nanostructures in MOVPE
-
Seifert, W. et al. Growth of one-dimensional nanostructures in MOVPE. J. Cryst. Growth 272, 211-220 (2004).
-
(2004)
J. Cryst. Growth
, vol.272
, pp. 211-220
-
-
Seifert, W.1
-
28
-
-
33847112814
-
Surface diffusion effects on growth of nanowires by chemical beam epitaxy
-
Persson, A. I., Froberg, L. E., Jeppesen, S., Bjork, M. T. & Samuelson, L. Surface diffusion effects on growth of nanowires by chemical beam epitaxy. J. Appl. Phys. 101, 034313 (2007).
-
(2007)
J. Appl. Phys
, vol.101
, pp. 034313
-
-
Persson, A.I.1
Froberg, L.E.2
Jeppesen, S.3
Bjork, M.T.4
Samuelson, L.5
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