Role of the wetting layer for the SiGe Stranski-Krastanow island growth on planar and pit-patterned substrates

Semiconductor Science and Technology

Volumn 26, Issue 1, 2011, Pages

  Zhang, J J ^a,b   Rastelli, A ^b   Schmidt, O G ^b   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b IFW DRESDEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHING; CRITICAL THICKNESS; ETCH STOP; ETCHING SOLUTIONS; HIGH GROWTH TEMPERATURES; INITIAL STAGES; ISLAND FORMATION; ISLAND GROWTH; PATTERNED SUBSTRATES; PLANAR SUBSTRATE; PLANAR SURFACE; SI(0 0 1); SIGE ISLANDS; WETTING LAYER;

ATOMIC FORCE MICROSCOPY; ETCHING; GERMANIUM; SILICON; SILICON ALLOYS; WETTING;

SUBSTRATES;

EID: 79551698078     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/1/014028     Document Type: Article

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