Quantitative determination of Ge profiles across SiGe wetting layers on Si (001)

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Brehm, M ^a   Grydlik, M ^a   Lichtenberger, H ^a   Fromherz, T ^a   Hrauda, N ^a   Jantsch, W ^a   Schaffler F ^a   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS; SILICON; SURFACE SEGREGATION; TECHNETIUM; WETTING;

BAND STRUCTURE-CALCULATIONS; CAPPING LAYER; COMPOSITION PROFILES; DEPOSITION TEMPERATURE; GE CONTENT; HIGH GROWTH; PEAK POSITIONS; PHOTOLUMINESCENCE SPECTRA; QUANTITATIVE DETERMINATIONS; RED SHIFTING; SI(001); WETTING LAYERS;

GERMANIUM;

EID: 52949133717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2988261     Document Type: Article

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