Growth and properties of III-V compound semiconductor heterostructure nanowires

Semiconductor Science and Technology

Volumn 26, Issue 1, 2011, Pages

  Gao, Q ^a   Tan, H H ^a   Jackson, H E ^b   Smith, L M ^b   Yarrison Rice, J M ^c   Zou, Jin ^d   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF CINCINNATI   (United States)

^c MIAMI UNIVERSITY   (United States)

^d UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BULK DEFECTS; GAAS; GAAS SUBSTRATES; HETEROSTRUCTURES; III-V COMPOUND SEMICONDUCTOR; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICRO RAMAN SPECTROSCOPY; NANOWIRE HETEROSTRUCTURES; NON-RADIATIVE; STRAIN EFFECT; TIME-RESOLVED PHOTOLUMINESCENCE; VAPOR-LIQUID-SOLID MECHANISM;

CARRIER LIFETIME; CRYSTAL STRUCTURE; GALLIUM ALLOYS; GALLIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; ORGANIC CHEMICALS; ORGANOMETALLICS; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SURFACE DEFECTS; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 79551693897     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/1/014035     Document Type: Article

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