Performance evaluation of GaAs-GaP core-shell-nanowire field-effect transistors

IEEE Transactions on Electron Devices

Volumn 56, Issue 6, 2009, Pages 1199-1203

  He, Yuhui ^a,b   Zhao, Yuning ^a,b   Fan, Chun ^a   Kang, Jinfeng ^a,b   Han, Ruqi ^a,b   Liu, Xiaoyan ^a,b  

^a PEKING UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Field effect transistors (FETs); Quantum wires; Semiconductor heterojunctions

Indexed keywords

BALLISTIC TRANSPORTS; CORE-SHELL; DESIGN GUIDE; DEVICE PERFORMANCE; EQUIVALENT OXIDE THICKNESS; FIELD-EFFECT TRANSISTORS (FETS); GAAS; ON CURRENTS; PERFORMANCE EVALUATION; QUANTUM WIRES; SEMICONDUCTOR HETEROJUNCTIONS; STRAIN EFFECT; SUB-BANDS;

BALLISTICS; GALLIUM ALLOYS; MESFET DEVICES; NANOWIRES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; WIRE;

FIELD EFFECT TRANSISTORS;

EID: 67349233491     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2019739     Document Type: Article

References (17)

1. L. J. Lauhon, M. S. Gudiksen, D. Wang, and C. M. Lieber, "Epitaxial core-shell and core-multishell nanowire heterostructures," Nature vol. 420, no. 6911, pp. 57-61, Nov. 2002.
2. W. Lu, J. Xiang, B. P. Timko, Y. Wu, and C. M. Lieber, "One-dimensional hole gas in germanium/silicon nanowire heterostructures," in Proc. Nat. Acad. Sci., Jul. 2005, vol. 102, pp. 10 046-10 051.
3. H.-M. Lin, Y.-L. Chen, J. Yang, Y.-C. Liu, K.-M. Yin, J.-J. Kai, F.-R. Chen, L.-C. Chen, Y.-F. Chen, and C.-C. Chen, "Synthesis and characterization of core-shell GaPaN and GaNaP nanowires," Nano Lett., vol. 3, no. 4, pp. 537-541, Mar. 2003.
4. K. Tateno, H. Gotoh, and Y. Watanabe, "GaAs/AlGaAs nanowires capped with AlGaAs layers on GaAs(311)B substrates," Appl. Phys. Lett., vol. 85, no. 10, pp. 1808-1810, Sep. 2004.
5. 1-xP core-shell nanowires," Nano Lett., vol. 5, no. 10, pp. 19 433-19 470, Nov. 2005.
6. J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C. M. Lieber, "Ge/Si nanowire heterostructures as high-performance field-effect transistors," Nature, vol. 441, no. 7092, pp. 489-493, May 2006.
7. G. Liang, J. Xiang, N. Kharche, G. Klimeck, C. M. Lieber, and M. Lundstrom, "Performance analysis of a Ge/Si core/shell nanowire field-effect transistor," Nano Lett., vol. 7, no. 3, pp. 642-646, Feb. 2007.
8. C. Pryor, J. Kim, L. W. Wang, A. J. Williamson, and A. Zunger, "Comparison of two methods for describing the strain profiles in quantum dots," J. Appl. Phys., vol. 83, no. 5, pp. 2548-2550, Mar. 1998.
9. B. Jogai, "Three-dimensional strain field calculations in coupled InAs/GaAs quantum dots," J. Appl. Phys., vol. 88, no. 9, pp. 5050-5055, Nov. 2000.
10. N. Søndergaard, Y. He, C. Fan, R. Han, T. Guhr, and H. Q. Xu, "Strain distributions in lattice mismatched semiconductor core-shell nanowires," J. Vac. Sci. Technol. B., vol. 27, pp. 827-831, 2009.
11. C. Y. Chao and S. L. Chuang, "Spin-orbit coupling effects on the valence band structures of strained semiconductor quantum wells," Phys. Rev. B, Condens. Matter, vol. 46, no. 7, pp. 4110-4122, Aug. 1992.
12. T. Bahder, "Eight-band k.p model of strained zinc-blende crystals," Phys. Rev. B, Condens. Matter, vol. 41, no. 17, pp. 11 992-12 001, Jun. 1992.
13. Y. Zhang, "Motion of electrons in semiconductors under inhomogeneous strain with application to laterally confined quantum wells," Phys. Rev. B, Condens. Matter, vol. 49, no. 20, pp. 14 352-14 366, May 1994.
14. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. Appl. Phys., vol. 89, no. 11, pp. 5815-5875, Jun. 2001.
15. A. Rahman, J. Guo, S. Datta, and M. Lundstrom, "Theory of ballistic nanotransistors," IEEE Trans. Electron Devices, vol. 50, no. 9, pp. 1853-1864, Sep. 2003.
16. M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation. New York: Springer-Verlag, 2005.
17. Y. Sun, S. E. Thompson, and T. Nishida, "Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 101, no. 10, pp. 104 503-104 524, May 2007.