Nearly intrinsic exciton lifetimes in single twin-free GaAsAlGaAs core-shell nanowire heterostructures

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Perera, S ^a   Fickenscher, M A ^a   Jackson, H E ^a   Smith, L M ^a   Yarrison Rice, J M ^b   Joyce, H J ^c   Gao, Q ^c   Tan, H H ^c   Jagadish, C ^c   Zhang, X ^d   Zou, J ^d  

^a UNIVERSITY OF CINCINNATI   (United States)

^b MIAMI UNIVERSITY   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC WIRE; EXCITONS; GALLIUM ALLOYS; HETEROJUNCTIONS; LASER EXCITATION; OXYGEN; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM;

CARRIER DENSITIES; CORE-SHELL NANOWIRES; DOUBLE HETEROSTRUCTURES; EXCITON LIFETIMES; EXCITON RECOMBINATIONS; GAAS; GAAS-ALGAAS; HETEROSTRUCTURE; HIGH QUALITIES; MANY-BODY EFFECTS; OXYGEN DEFECTS; PULSED LASER EXCITATIONS; STATE FILLINGS; THIN CAPPING; TIME-RESOLVED PHOTOLUMINESCENCES; TWIN-FREE; TWO-DIMENSIONAL;

NANOWIRES;

EID: 51849161220     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967877     Document Type: Article

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