Novel growth and properties of GaAs nanowires on Si substrates

Nanotechnology

Volumn 21, Issue 3, 2010, Pages

  Kang, J H ^a   Gao, Q ^a   Joyce, H J ^a   Tan, H H ^a   Jagadish, C ^a   Kim, Y ^a   Choi, D Y ^b   Guo, Y ^c   Xu, H ^c   Zou, J ^c   Fickenscher, M A ^d   Smith, L M ^d   Jackson, H E ^d   Yarrison Rice, J M ^e  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b Dong A University   (South Korea)

^c UNIVERSITY OF QUEENSLAND   (Australia)

^d UNIVERSITY OF CINCINNATI   (United States)

^e MIAMI UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYER GROWTH; DOUBLE LAYER STRUCTURE; GAAS; HIGH TEMPERATURE; IN-SITU ANNEALING; LOW TEMPERATURES; NANOWIRE GROWTH; PRECURSOR RATIOS; SI SUBSTRATES; SI(111) SUBSTRATE; STRUCTURAL AND OPTICAL PROPERTIES; V/III RATIO; VERTICALLY ALIGNED;

BUFFER LAYERS; EPITAXIAL LAYERS; GALLIUM ARSENIDE; MORPHOLOGY; NANOWIRES; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES;

GALLIUM ALLOYS;

EID: 75249094308     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/3/035604     Document Type: Article

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