Influence of reactor cleanness and process conditions on the growth by PVT and the purity of 4H and 6H SiC crystals

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 58-62

  Grosse, P ^a   Basset, G ^a   Calvat, C ^a   Couchaud, M ^a   Faure, C ^a   Ferrand, B ^a   Grange, Y ^a   Anikin, M ^b   Bluet, J M ^b   Chourou, K ^b   Madar, R ^b  

^a CEA LETI   (France)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

GDMS; Graphite purity; Silicon carbide; SIMS

Indexed keywords

CRUCIBLES; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DEGASSING; GLOW DISCHARGES; GRAPHITE; HEAT TREATMENT; HYDROGEN; MASS TRANSFER; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

GLOW DISCHARGE MASS SPECTROSCOPY (GDMS); PHYSICAL VAPOR TRANSPORT (PVT); QUADRUPOLE GAS ANALYZERS;

SILICON CARBIDE;

EID: 6744248667     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00445-0     Document Type: Article

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